caution observe precautions when handling because these devices are sensitive to electrostatic discharge. hetero junction field effect transistor ne3514s02 k band super low noise amplifier n-channel hj-fet features ? super low noise figure and high associated gain nf = 0.75 db t yp., g a = 10 db t yp. @ f = 20 ghz ? micro-x plastic (s02) package applications ? 20 ghz-band dbs lnb ? other k-band communication sy stems ordering information part number order number package quantity marking supply i ng form n e 3 5 1 4 s 0 2 - t 1 c n e 3 5 1 4 s 0 2 - t 1 c - a 2 k p c s / r e e l d n e 3 5 1 4 s 0 2 - t 1 d n e 3 5 1 4 s 0 2 - t 1 d - a s02 (pb-free) 10 kpcs/reel ? 8 mm w i de embossed taping ? pin 4 (gate) faces the perforation side of the tape remark t o order evaluation samples, contact y our nearby sales office. part number for sample order: ne3514s02 absolute maximum ratings (t a = +25 c) p a r a m e t e r s y m b o l r a t i n g s u n i t drain to source voltage v ds 4 v gate to source voltage v gs ? 3 v drain current i d i dss m a gate current i g 1 0 0 a total pow e r dissipation p tot note 1 6 5 m w channel temperature t ch + 1 2 5 c storage temperature t st g ? 65 to +125 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb document no. pg10593ej01v0ds (1st edition) date published february 2006 cp(n)
ne3514s02 recommended operating conditions (t a = +25 c) p a r a m e t e r s y m b o l m i n . ty p . m a x . u n i t drain to source voltage v ds 1 2 3 v drain current i d 5 1 0 1 5 m a input pow e r p in ? ? 0 d b m electrical characteristics (t a = +25 c, unless otherw ise specified) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n . ty p . m a x . u n i t gate to source leak current i gs o v gs = ? 3 v ? 0 . 5 1 0 a saturated drain current i dss v ds = 2 v, v gs = 0 v 15 40 70 ma gate to source cutoff voltage v g s ( o ff) v ds = 2 v, i d = 100 a ? 0.2 ? 0.7 ? 2 . 0 v t r a n s c o n d u c t a n c e g m v ds = 2 v, i d = 10 ma 40 55 ? ms noise figure nf v ds = 2 v, i d = 10 ma, f = 20 ghz ? 0 . 7 5 1 . 0 d b associated g a in g a 8 1 0 ? db data sheet pg10593ej01v0ds 2
ne3514s02 typical characteristics (t a = +25 c, unless otherw ise specified) total power dissipation p tot (mw) ambient temperature t a (?c) vs. ambient temperature total power dissipation 250 200 150 100 50 0 50 100 150 200 250 80 60 40 20 0 ?.0 ?.0 0 drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage v ds = 2 v nf min g a v ds = 2 v i d = 10 ma drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. 100 20 40 60 80 0 1.0 2.0 v gs = 0 v 0.2 v 0.4 v 0.6 v mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 12 14 18 8 10 4 6 2 16 0 10 15 0 5 20 25 30 remark t he graphs indicate nominal characteristics. data sheet pg10593ej01v0ds 3
ne3514s02 s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/ data sheet pg10593ej01v0ds 4
ne3514s02 rf measuring layout pattern (reference only) (unit: m m ) 13.0 2.80 l2?x ver. 1 1.7 mm/r.p. 2.60 2.06 2.6 1.7 1.7 reference plane (calibration plane) reference plane (calibration plane) 6.0 0.64 0.74 2.06 0.54 0.3 th rt /duroid 5880/rogers t = 0.254 mm r = 2.20 tan delta = 0.0009 @10 ghz data sheet pg10593ej01v0ds 5
ne3514s02 package dimensions s02 (unit: mm) pin connections 1. source 2. drain 3. source 4. gate (top view) (side view) (bottom view) 0.5 typ. 2.6?.1 0.65 typ. 3.2?.2 d 1 2 3 4 2.2?.2 3.2?.2 1.7 1.5 max. 0.15?.05 3 4 1 2 2.2?.2 2.2?.2 data sheet pg10593ej01v0ds 6
ne3514s02 recommended soldering conditions t h is product should be soldered and mounted under the follow i ng recommended conditions. f o r soldering methods and conditions other t han those recommended below , contact y our nearby sales office. soldering method soldering c o n d i t i o n s c o n d i t i o n sy m b o l infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ir260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering met hods together (except for partial heating). data sheet pg10593ej01v0ds 7
4590 p a t r ick hen r y drive san t a c l ara, ca 9505 4- 181 7 teleph o n e : ( 408) 919- 25 00 facsim ile: ( 408 ) 988- 027 9 subject: compliance with eu dire ctives cel certifies, to its kno w ledge, that semicondu ctor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electron ic equipment (rohs) an d the requir e ments of eu directive 2003/11/ec restriction o n penta and octa bde. cel pb-free products ha ve the same base part n u mber with a suffix added. the suffix ?a indicates that the device is pb-fre e. the ?az suffix is use d to designa te devices containing pb which are exempted from the requirement of ro hs directive (*). in all cases the de vices have pb-free terminals. all devices with these suffixes meet the require ments of the rohs directive. this statu s is based on cel?s understanding of t he eu directives and kn owledge of the materials that go into its pr oducts as of the date of disclo s ure o f this inform ation. re st rict e d s u bst a n c e per rohs con c e n tratio n limit per rohs (value s are n o t yet fixed) con c e n tratio n contai ned in cel devices - a - a z lead (p b) < 100 0 ppm not dete cted (*) mercury < 100 0 ppm not dete cted cadmi u m < 100 ppm not dete cted hexavale nt chromi um < 100 0 ppm not dete cted pbb < 1000 ppm not detec t ed pbde < 1000 ppm not detec t ed if you should have any additional q uestions reg a rding our d e vices and compliance t o environme n tal standards, p l ease do not hesitate to contact your local representative. important inf o rm ation and disclaimer: infor m ation provided b y cel on its w ebsite or in other communi cations concertin g the subs tance content of its pro ducts represents know ledge and b e lief as of t he date that it is provided. cel bases its know ledge a n d belief on informa t ion provided b y t h ird parties and make s no representa t ion or w a rran t y a s to the accurac y of such information. efforts are u nder w a y to b e tte r integrate informa t ion from third pa rties. cel has ta ken and cont inue s to take reasona ble steps to provide repr esentative and ac cur a te information but ma y not h a ve conducted destructive testing or chemical analy s is on incoming ma terials and chemicals. cel and ce l suppliers consid er certain inform ation to be pro p ri etar y , and thus c as numbers and other limited information ma y not be availab le for release. in no event shall cel?s liability ari s ing out of such information e x cee d the total purch ase price of the cel part ( s) at issue s old by cel to customer on an annual basis. see cel te rms and conditions f o r additional cl arification of w a rran t ies and liability .
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